Active coplanar transmission line based on double-barrier GaAs/AlAs resonant tunneling diodes

Charge Distribution and Capacitance of Double Barrier Resonant Tunneling Diodes

Charge and potential profiles are self-consistently calculated in double-barrier heterostmctures to derive the capacitance of resonant tunnelling devices. We show that the dipole charge integrated over the accumulation or the depletion side of the device is the result of a complex arrangement of the mobile charge dragged and drifted when a bias is applied. Excellent agreement is found with capa...

Current fluctuations in double-barrier quantum well resonant tunneling diodes

The measurements of the spectral intensity of the current fluctuations in double-barrier quantum well resonant tunneling diodes as a function of temperature and bias current are reported. Two types of devices were studied: one with AlAs barriers and GaAs well and contact regions, and the other has Alo,,Gae,As barriers. The frequency range covered is 1 Hz-100 kHz and the temperature range is 78-...

Transmission zero engineering in lateral double-barrier resonant tunneling devices

Transmission zero engineering in lateral double-barrier resonant tunneling devices is investigated. We show that, by inserting a resonant cavity in the quantum well region of a lateral double-barrier resonant tunneling structure and engineering the placement of transmission zero-pole pairs, the current peak-to-valley ratio of the device can be drastically improved at low temperature. An advanta...

Resonant Tunneling in Double Superlattice Barrier Heterostructures

We have invest igated resonant tunnel ing in double barr ier heterostructures in which the tunnel barr iers have been replaced by short period superlattices, and have shown for the first t ime quantum well confinement in a s ingle quantum well bounded by superlattices. These results also demonstrate the first u t i l iza t ion of shor t period b ina ry super la t t ices as effective t unne l ba...

THz resonant-tunneling diodes